NJT4031NT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 300mA, 3A.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 215MHz.Maximum collector currents can be below 3A volts.
NJT4031NT3G Features
the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NJT4031NT3G Applications
There are a lot of ON Semiconductor NJT4031NT3G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
