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PMBT6429,215

  • PMBT6429,215
  • PMBT6429,215

PMBT6429,215

PMBT6429,215

Nexperia USA Inc.

PMBT6429,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT6429,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PMBT6429
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 100MHz
Frequency - Transition 700MHz
VCEsat-Max 0.6 V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $26.638000 $26.638
10 $25.130189 $251.30189
100 $23.707725 $2370.7725
500 $22.365778 $11182.889
1000 $21.099791 $21099.791
PMBT6429,215 Product Details

PMBT6429,215 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 500 @ 100μA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.As a result, the part has a transition frequency of 100MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

PMBT6429,215 Features


the DC current gain for this device is 500 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz

PMBT6429,215 Applications


There are a lot of Nexperia USA Inc. PMBT6429,215 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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