BCW68HTA Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -800mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -800mA.100MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 45V volts.Maximum collector currents can be below 800mA volts.
BCW68HTA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68HTA Applications
There are a lot of Diodes Incorporated BCW68HTA applications of single BJT transistors.
- Inverter
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- Interface
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- Driver
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- Muting
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