FZT855TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 5V DC current gain.A collector emitter saturation voltage of 355mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 5A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.90MHz is present in the transition frequency.An input voltage of 150V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
FZT855TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 355mV
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 90MHz
FZT855TA Applications
There are a lot of Diodes Incorporated FZT855TA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
