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BCW66HR

  • BCW66HR
  • BCW66HR

BCW66HR

BCW66HR

Nexperia USA Inc.

BCW66HR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW66HR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03162 $0.09486
6,000 $0.02852 $0.17112
15,000 $0.02480 $0.372
30,000 $0.02232 $0.6696
75,000 $0.01984 $1.488
150,000 $0.01736 $2.604
BCW66HR Product Details

BCW66HR Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BCW66HR Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW66HR Applications


There are a lot of Nexperia USA Inc. BCW66HR applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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