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NSV12100UW3TCG

NSV12100UW3TCG

NSV12100UW3TCG

ON Semiconductor

NSV12100UW3TCG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV12100UW3TCG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 3-WDFN Exposed Pad
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 740mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:27096 items

Pricing & Ordering

QuantityUnit PriceExt. Price

NSV12100UW3TCG Product Details

NSV12100UW3TCG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 440mV @ 100mA, 1A.A 12V maximal voltage - Collector Emitter Breakdown is present in the device.

NSV12100UW3TCG Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A

NSV12100UW3TCG Applications


There are a lot of ON Semiconductor NSV12100UW3TCG applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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