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NSV12100UW3TCG

NSV12100UW3TCG

NSV12100UW3TCG

ON Semiconductor

NSV12100UW3TCG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV12100UW3TCG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 3-WDFN Exposed Pad
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 740mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.33160 $0.9948
NSV12100UW3TCG Product Details

NSV12100UW3TCG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 440mV @ 100mA, 1A.A 12V maximal voltage - Collector Emitter Breakdown is present in the device.

NSV12100UW3TCG Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A

NSV12100UW3TCG Applications


There are a lot of ON Semiconductor NSV12100UW3TCG applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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