NSV12100UW3TCG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSV12100UW3TCG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
3-WDFN Exposed Pad
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
740mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
440mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.33160
$0.9948
NSV12100UW3TCG Product Details
NSV12100UW3TCG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 440mV @ 100mA, 1A.A 12V maximal voltage - Collector Emitter Breakdown is present in the device.
NSV12100UW3TCG Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 440mV @ 100mA, 1A
NSV12100UW3TCG Applications
There are a lot of ON Semiconductor NSV12100UW3TCG applications of single BJT transistors.