BC858B-7-F Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In the part, the transition frequency is 200MHz.In extreme cases, the collector current can be as low as 100mA volts.

BC858B-7-F Features

the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC858B-7-F Applications

There are a lot of Diodes Incorporated BC858B-7-F applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting