NSS1C200MZ4T3G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.The part has a transition frequency of 120MHz.A maximum collector current of 3A volts is possible.
NSS1C200MZ4T3G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
NSS1C200MZ4T3G Applications
There are a lot of ON Semiconductor NSS1C200MZ4T3G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
