FMMT722TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT722TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Voltage - Rated DC
-70V
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.5A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT722
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
260mV @ 200mA, 1.5A
Collector Emitter Breakdown Voltage
70V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-175mV
Max Breakdown Voltage
70V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1.5A
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.427080
$0.42708
10
$0.402906
$4.02906
100
$0.380100
$38.01
500
$0.358585
$179.2925
1000
$0.338287
$338.287
FMMT722TA Product Details
FMMT722TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -175mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of -1.5A is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.There is a breakdown input voltage of 70V volts that it can take.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
FMMT722TA Features
the DC current gain for this device is 300 @ 100mA 5V a collector emitter saturation voltage of -175mV the vce saturation(Max) is 260mV @ 200mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is -1.5A a transition frequency of 200MHz
FMMT722TA Applications
There are a lot of Diodes Incorporated FMMT722TA applications of single BJT transistors.