NST3904F3T5G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Breakdown input voltage is 40V volts.Maximum collector currents can be below 200mA volts.
NST3904F3T5G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
NST3904F3T5G Applications
There are a lot of ON Semiconductor NST3904F3T5G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
