NTB75N03-06T4

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NTB75N03-06T4

Manufacturer part number:NTB75N03-06T4

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 75A D2PAK

Case Package:SOT-23

Datasheet:NTB75N03-06T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	75A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.5W Ta 125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 37.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5635pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 5V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	225A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead