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SGL5N150UFTU

  • SGL5N150UFTU - SGL5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
  • SGL5N150UFTU - SGL5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SGL5N150UFTU

SGL5N150UFTU

ON Semiconductor

SGL5N150UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGL5N150UFTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Supplier Device Package TO-264-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 125W
Voltage - Collector Emitter Breakdown (Max) 1500V
Current - Collector (Ic) (Max) 10A
Test Condition 600V, 5A, 10Ohm, 10V
Vce(on) (Max) @ Vge, Ic 5.5V @ 10V, 5A
Gate Charge30nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 10ns/30ns
Switching Energy 190μJ (on), 100μJ (off)
In-Stock:1052 items

SGL5N150UFTU Product Details

SGL5N150UFTU Description


The SGL5N150UFTU is an Insulated Gate Bipolar Transistor (IGBT) providing low conduction and switching losses.



SGL5N150UFTU Features


  • High-Speed Switching

  • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A

  • High Input Impedance



SGL5N150UFTU Applications


  • Switching Power Supply - High Input Voltage Off-line Converter


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