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2SC3150L

2SC3150L

2SC3150L

onsemi

NPN 150°C (TJ) 10μA (ICBO) TO-220-3 Through Hole

SOT-23

2SC3150L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case TO-220-3
Mounting Type Through Hole
Supplier Device Package TO-220AB
Mfr onsemi
Product Status Active
Package Bulk
Series -
Operating Temperature150°C (TJ)
Power - Max 50 W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 800 V
Current - Collector (Ic) (Max) 3 A
Frequency - Transition 15MHz
In-Stock:20615 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.512137$0.512137
10$0.483148$4.83148
100$0.455800$45.58
500$0.430000$215
1000$0.405660$405.66

2SC3150L Product Details

2SC3150L Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 200mA, 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.TO-220AB is the supplier device package for this product.This device displays a 800 V maximum voltage - Collector Emitter Breakdown.

2SC3150L Features


the DC current gain for this device is 10 @ 200mA, 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the supplier device package of TO-220AB


2SC3150L Applications


There are a lot of onsemi
2SC3150L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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