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2SC3150L

2SC3150L

2SC3150L

onsemi

NPN 150°C (TJ) 10μA (ICBO) TO-220-3 Through Hole

SOT-23

2SC3150L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case TO-220-3
Mounting Type Through Hole
Supplier Device Package TO-220AB
Mfr onsemi
Product Status Active
Package Bulk
Series -
Operating Temperature 150°C (TJ)
Power - Max 50 W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 800 V
Current - Collector (Ic) (Max) 3 A
Frequency - Transition 15MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.512137 $0.512137
10 $0.483148 $4.83148
100 $0.455800 $45.58
500 $0.430000 $215
1000 $0.405660 $405.66
2SC3150L Product Details

2SC3150L Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 200mA, 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.TO-220AB is the supplier device package for this product.This device displays a 800 V maximum voltage - Collector Emitter Breakdown.

2SC3150L Features


the DC current gain for this device is 10 @ 200mA, 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the supplier device package of TO-220AB


2SC3150L Applications


There are a lot of onsemi
2SC3150L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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