BF493SG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BF493SG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
2V @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
350V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
50MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
BF493SG Product Details
BF493SG Overview
This device has a DC current gain of 40 @ 10mA 10V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 2mA, 20mA.Product comes in the supplier's device package TO-92-3.Detection of Collector Emitter Breakdown at 350V maximal voltage is present.
BF493SG Features
the DC current gain for this device is 40 @ 10mA 10V the vce saturation(Max) is 2V @ 2mA, 20mA the supplier device package of TO-92-3
BF493SG Applications
There are a lot of Rochester Electronics, LLC BF493SG applications of single BJT transistors.