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RJP60V0DPM-00#T1

RJP60V0DPM-00#T1

RJP60V0DPM-00#T1

Renesas Electronics America

IGBT 600V 45A 40W TO-3PFM

SOT-23

RJP60V0DPM-00#T1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Power - Max 40W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 45A
Collector Emitter Breakdown Voltage 600V
Turn On Time 85 ns
Test Condition 300V, 22A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 22A
Turn Off Time-Nom (toff) 170 ns
IGBT Type Trench
Gate Charge 75nC
Td (on/off) @ 25°C 45ns/100ns
Gate-Emitter Thr Voltage-Max 7.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.550000 $3.55
10 $3.349057 $33.49057
100 $3.159487 $315.9487
500 $2.980648 $1490.324
1000 $2.811933 $2811.933

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