BCX6910H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCX6910H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
3W
Terminal Position
SINGLE
Terminal Form
FLAT
Frequency
100MHz
Number of Elements
1
Configuration
SINGLE
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.821165
$1.821165
10
$1.718080
$17.1808
100
$1.620830
$162.083
500
$1.529085
$764.5425
1000
$1.442533
$1442.533
BCX6910H6327XTSA1 Product Details
BCX6910H6327XTSA1 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Parts of this part have transition frequencies of 100MHz.When collector current reaches its maximum, it can reach 1A volts.
BCX6910H6327XTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 100MHz
BCX6910H6327XTSA1 Applications
There are a lot of Infineon Technologies BCX6910H6327XTSA1 applications of single BJT transistors.