BCX6910H6327XTSA1 Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Parts of this part have transition frequencies of 100MHz.When collector current reaches its maximum, it can reach 1A volts.
BCX6910H6327XTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCX6910H6327XTSA1 Applications
There are a lot of Infineon Technologies BCX6910H6327XTSA1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
