3STR1630 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
3STR1630 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
3STR16
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
30V
Max Breakdown Voltage
30V
Frequency - Transition
100MHz
Emitter Base Voltage (VEBO)
5V
hFE Min
260
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.748525
$1.748525
10
$1.649551
$16.49551
100
$1.556180
$155.618
500
$1.468094
$734.047
1000
$1.384995
$1384.995
3STR1630 Product Details
3STR1630 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.There is a breakdown input voltage of 30V volts that it can take.In extreme cases, the collector current can be as low as 6A volts.
3STR1630 Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 300mV @ 500mA, 5A the emitter base voltage is kept at 5V
3STR1630 Applications
There are a lot of STMicroelectronics 3STR1630 applications of single BJT transistors.