ZXTN04120HFFTA Overview

DC current gain in this device equals 3000 @ 1A 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 5mA, 2A.An emitter's base voltage can be kept at 10V to gain high efficiency.Parts of this part have transition frequencies of 120MHz.This device can take an input voltage of 120V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

ZXTN04120HFFTA Features

the DC current gain for this device is 3000 @ 1A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 1.5V @ 5mA, 2A
the emitter base voltage is kept at 10V
a transition frequency of 120MHz

ZXTN04120HFFTA Applications

There are a lot of Diodes Incorporated ZXTN04120HFFTA applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter