NSL12AWT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
NSL12AWT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
6
JESD-30 Code
R-PDSO-G6
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
450mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 800mA 1.5 V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
290mV @ 20mA, 1A
Voltage - Collector Emitter Breakdown (Max)
12V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
NSL12AWT1 Product Details
NSL12AWT1 Overview
In this device, the DC current gain is 100 @ 800mA 1.5 V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Parts of this part have transition frequencies of 100MHz.There is a 12V maximal voltage in the device due to collector-emitter breakdown.
NSL12AWT1 Features
the DC current gain for this device is 100 @ 800mA 1.5 V the vce saturation(Max) is 290mV @ 20mA, 1A a transition frequency of 100MHz
NSL12AWT1 Applications
There are a lot of Rochester Electronics, LLC NSL12AWT1 applications of single BJT transistors.