BC847AW-7-F Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.As a result, it can handle voltages as low as 65V volts.Maximum collector currents can be below 100mA volts.

BC847AW-7-F Features

the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

BC847AW-7-F Applications

There are a lot of Diodes Incorporated BC847AW-7-F applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface