BCP68T1G Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.As you can see, the part has a transition frequency of 60MHz.There is a breakdown input voltage of 20V volts that it can take.Maximum collector currents can be below 1A volts.
BCP68T1G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 60MHz
BCP68T1G Applications
There are a lot of ON Semiconductor BCP68T1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
