MMBT5550LT1G Overview

This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a breakdown input voltage of 140V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

MMBT5550LT1G Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

MMBT5550LT1G Applications

There are a lot of ON Semiconductor MMBT5550LT1G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface