2SA1313-Y,LF

new-10%

Manufacturer part number:2SA1313-Y,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Trans GP BJT PNP 50V 0.5A 3-Pin S-Mini Embossed T/R

Case Package:SOT-23

Datasheet:2SA1313-Y,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Polarity	PNP
Power - Max	200mW
Gain Bandwidth Product	200MHz
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Collector Emitter Saturation Voltage	-100mV
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Collector Base Voltage (VCBO)	-50V
Emitter Base Voltage (VEBO)	-5V
hFE Min	25
Continuous Collector Current	-500mA
Height	1.1mm
Length	2.9mm
Width	1.5mm
RoHS Status	RoHS Compliant