2STBN15D100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
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2STBN15D100 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
2.000002g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR
Subcategory
Other Transistors
Max Power Dissipation
70W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Base Part Number
2STBN15
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 4mA, 4A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
12A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.51891
$0.51891
2,000
$0.48804
$0.97608
5,000
$0.46746
$2.3373
2STBN15D100 Product Details
2STBN15D100 Overview
DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 4mA, 4A.For high efficiency, the continuous collector voltage must be kept at 12A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Input voltage breakdown is available at 100V volts.A maximum collector current of 12A volts is possible.
2STBN15D100 Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.3V @ 4mA, 4A the emitter base voltage is kept at 5V
2STBN15D100 Applications
There are a lot of STMicroelectronics 2STBN15D100 applications of single BJT transistors.