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2STBN15D100

2STBN15D100

2STBN15D100

STMicroelectronics

2STBN15D100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2STBN15D100 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.000002g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory Other Transistors
Max Power Dissipation 70W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number 2STBN15
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 4mA, 4A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Continuous Collector Current 12A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.51891 $0.51891
2,000 $0.48804 $0.97608
5,000 $0.46746 $2.3373
2STBN15D100 Product Details

2STBN15D100 Overview


DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 4mA, 4A.For high efficiency, the continuous collector voltage must be kept at 12A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Input voltage breakdown is available at 100V volts.A maximum collector current of 12A volts is possible.

2STBN15D100 Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V

2STBN15D100 Applications


There are a lot of STMicroelectronics 2STBN15D100 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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