PBSS4350Z,135 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 290mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.100MHz is present in the transition frequency.Input voltage breakdown is available at 50V volts.The maximum collector current is 3A volts.

PBSS4350Z,135 Features

the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

PBSS4350Z,135 Applications

There are a lot of Nexperia USA Inc. PBSS4350Z,135 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver