FJP1943RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJP1943RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
80W
Frequency
30MHz
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
230V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
-230V
Emitter Base Voltage (VEBO)
-5V
hFE Min
55
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.600000
$2.6
10
$2.452830
$24.5283
100
$2.313991
$231.3991
500
$2.183010
$1091.505
1000
$2.059444
$2059.444
FJP1943RTU Product Details
FJP1943RTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 55 @ 1A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 15A volts is possible.
FJP1943RTU Features
the DC current gain for this device is 55 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at -5V a transition frequency of 30MHz
FJP1943RTU Applications
There are a lot of ON Semiconductor FJP1943RTU applications of single BJT transistors.