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FJP1943RTU

FJP1943RTU

FJP1943RTU

ON Semiconductor

FJP1943RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP1943RTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 80W
Frequency 30MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -230V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.600000 $2.6
10 $2.452830 $24.5283
100 $2.313991 $231.3991
500 $2.183010 $1091.505
1000 $2.059444 $2059.444
FJP1943RTU Product Details

FJP1943RTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 55 @ 1A 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 800mA, 8A.Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 15A volts is possible.

FJP1943RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz

FJP1943RTU Applications


There are a lot of ON Semiconductor FJP1943RTU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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