MMBTA13LT3G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.A transition frequency of 125MHz is present in the part.In extreme cases, the collector current can be as low as 300mA volts.

MMBTA13LT3G Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

MMBTA13LT3G Applications

There are a lot of ON Semiconductor MMBTA13LT3G applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface