ZXTN617MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 3A 2V DC current gain.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 280mV @ 50mA, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As you can see, the part has a transition frequency of 120MHz.Single BJT transistor can be broken down at a voltage of 15V volts.Collector current can be as low as 5A volts at its maximum.
ZXTN617MATA Features
the DC current gain for this device is 200 @ 3A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 280mV @ 50mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTN617MATA Applications
There are a lot of Diodes Incorporated ZXTN617MATA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
