BSS64AHZGT116 Overview
In this device, the DC current gain is 30 @ 25mA 1V, which is the ratio between the base current and the collector current.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In this part, there is a transition frequency of 140MHz.Device displays Collector Emitter Breakdown (100V maximal voltage).
BSS64AHZGT116 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 140MHz
BSS64AHZGT116 Applications
There are a lot of ROHM Semiconductor BSS64AHZGT116 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
