Name: STGB10NB60ST4
Brand: STMicroelectronics
SKU: STGB10NB60ST4
Availability: InStock

new-10%

STGB10NB60ST4

Manufacturer part number:STGB10NB60ST4

Manufacturer:STMicroelectronics

Description:STGB10NB60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB10NB60ST4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	10A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	460ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	29A
Continuous Drain Current (ID)	10A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Max Breakdown Voltage	600V
Turn On Time	1160 ns
Test Condition	480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 10A
Turn Off Time-Nom (toff)	3100 ns
Gate Charge	33nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	700ns/1.2μs
Switching Energy	600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGB10NB60ST4 Product Details

STGB10NB60ST4 Description

STGB10NB60ST4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGB10NB60ST4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

STGB10NB60ST4 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STGB10NB60ST4 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display