STGB10NB60ST4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGB10NB60ST4 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
80W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STGB10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
460ns
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
29A
Continuous Drain Current (ID)
10A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Max Breakdown Voltage
600V
Turn On Time
1160 ns
Test Condition
480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.75V @ 15V, 10A
Turn Off Time-Nom (toff)
3100 ns
Gate Charge
33nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
700ns/1.2μs
Switching Energy
600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.616787
$4.616787
10
$4.355460
$43.5546
100
$4.108924
$410.8924
500
$3.876344
$1938.172
1000
$3.656928
$3656.928
STGB10NB60ST4 Product Details
STGB10NB60ST4 Description
STGB10NB60ST4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGB10NB60ST4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.