STP60NF03L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP60NF03L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
60A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP60N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Case Connection
DRAIN
Turn On Delay Time
40 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
58nC @ 5V
Rise Time
250ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
60A
Threshold Voltage
1.5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
240A
Avalanche Energy Rating (Eas)
650 mJ
Recovery Time
75 ns
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STP60NF03L Product Details
STP60NF03L Description
STP60NF03L is a 30v N-channel STripFET? Power MOSFET. This Power MOSFET STP60NF03L is the latest development of STMicroelectronics' unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.