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BC546B B1G

BC546B B1G

BC546B B1G

Taiwan Semiconductor Corporation

BC546B B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC546B B1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.311075 $0.311075
10 $0.293467 $2.93467
100 $0.276856 $27.6856
500 $0.261185 $130.5925
1000 $0.246400 $246.4
BC546B B1G Product Details

BC546B B1G Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Product comes in TO-92 supplier package.There is a 65V maximal voltage in the device due to collector-emitter breakdown.

BC546B B1G Features


the DC current gain for this device is 200 @ 2mA 5V
the supplier device package of TO-92

BC546B B1G Applications


There are a lot of Taiwan Semiconductor Corporation BC546B B1G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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