BC817-16 RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC817-16 RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
300mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.285776
$0.285776
10
$0.269600
$2.696
100
$0.254340
$25.434
500
$0.239943
$119.9715
1000
$0.226361
$226.361
BC817-16 RFG Product Details
BC817-16 RFG Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Product package SOT-23 comes from the supplier.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC817-16 RFG Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of SOT-23
BC817-16 RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC817-16 RFG applications of single BJT transistors.