IRFR210TRPBF Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 140pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.6A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 1.5Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFR210TRPBF Features

a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)

IRFR210TRPBF Applications

There are a lot of Vishay Siliconix
IRFR210TRPBF applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification