SI6562CDQ-T1-GE3

new-10%

Manufacturer part number:SI6562CDQ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 20V 6.7A 8-TSSOP

Case Package:SOT-23

Datasheet:SI6562CDQ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Weight	157.991892mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	Other Transistors
Max Power Dissipation	1.7W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI6562
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	30 ns
Power - Max	1.6W 1.7W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	22m Ω @ 5.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6.7A 6.1A
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	25ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	25 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	6.1A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	6.7A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.2mm
Length	3mm
Width	4.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free