JANTX2N3501 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from American Microsemiconductor, Inc. stock available on our website
SOT-23
JANTX2N3501 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-39 (TO-205AD)
Operating Temperature
-65°C~200°C TA
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/366
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Number of Elements
1
Polarity
NPN
Power Dissipation
1W
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage
150V
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
300mA
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.90000
$11.9
10
$10.81500
$108.15
25
$10.00400
$250.1
100
$9.19280
$919.28
250
$8.38164
$2095.41
500
$7.84088
$3920.44
1,000
$7.21000
$7.21
JANTX2N3501 Product Details
JANTX2N3501 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Product package TO-39 (TO-205AD) comes from the supplier.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.During maximum operation, collector current can be as low as 300mA volts.
JANTX2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 400mV @ 15mA, 150mA the emitter base voltage is kept at 6V the supplier device package of TO-39 (TO-205AD)
JANTX2N3501 Applications
There are a lot of American Microsemiconductor, Inc. JANTX2N3501 applications of single BJT transistors.