2N5878 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N5878 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
150W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
3V @ 2.5A, 10A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.74000
$6.74
500
$6.6726
$3336.3
1000
$6.6052
$6605.2
1500
$6.5378
$9806.7
2000
$6.4704
$12940.8
2500
$6.403
$16007.5
2N5878 PBFREE Product Details
2N5878 PBFREE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2.5A, 10A.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
2N5878 PBFREE Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 3V @ 2.5A, 10A
2N5878 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N5878 PBFREE applications of single BJT transistors.