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2N5878 PBFREE

2N5878 PBFREE

2N5878 PBFREE

Central Semiconductor Corp

2N5878 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5878 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Operating Temperature-65°C~200°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 150W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 2.5A, 10A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:1003 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.74000$6.74
500$6.6726$3336.3
1000$6.6052$6605.2
1500$6.5378$9806.7
2000$6.4704$12940.8
2500$6.403$16007.5

2N5878 PBFREE Product Details

2N5878 PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 2.5A, 10A.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

2N5878 PBFREE Features


the DC current gain for this device is 20 @ 4A 4V
the vce saturation(Max) is 3V @ 2.5A, 10A

2N5878 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5878 PBFREE applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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