BCX5616H6433XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX5616H6433XTMA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Power - Max
2W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
100V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
8,000
$0.12027
$0.96216
BCX5616H6433XTMA1 Product Details
BCX5616H6433XTMA1 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product comes in PG-SOT89 supplier package.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Collector current can be as low as 1A volts at its maximum.
BCX5616H6433XTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the supplier device package of PG-SOT89
BCX5616H6433XTMA1 Applications
There are a lot of Infineon Technologies BCX5616H6433XTMA1 applications of single BJT transistors.