PBHV8115Z,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 500mA 10V.When VCE saturation is 350mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.30MHz is present in the transition frequency.The breakdown input voltage is 150V volts.In extreme cases, the collector current can be as low as 1A volts.

PBHV8115Z,115 Features

the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz

PBHV8115Z,115 Applications

There are a lot of Nexperia USA Inc. PBHV8115Z,115 applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver