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MMBT6589T1G

MMBT6589T1G

MMBT6589T1G

ON Semiconductor

MMBT6589T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT6589T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 540mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating -1A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.931040 $3.93104
10 $3.708528 $37.08528
100 $3.498612 $349.8612
500 $3.300577 $1650.2885
1000 $3.113752 $3113.752
MMBT6589T1G Product Details

MMBT6589T1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MMBT6589T1G Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz

MMBT6589T1G Applications


There are a lot of ON Semiconductor MMBT6589T1G applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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