MMBT6589T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MMBT6589T1G Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
MMBT6589T1G Applications
There are a lot of ON Semiconductor MMBT6589T1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
