JANTXV2N3637L

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JANTXV2N3637L

Manufacturer part number:JANTXV2N3637L

Manufacturer:Microsemi Corporation

Description:JANTXV2N3637L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

Case Package:SOT-23

Datasheet:JANTXV2N3637L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~200°C TJ
Packaging	Bulk
Published	2007
Series	Military, MIL-PRF-19500/357
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.29.00.95
Subcategory	Other Transistors
Max Power Dissipation	1W
Terminal Position	BOTTOM
Terminal Form	WIRE
Pin Count	3
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE
Power - Max	1W
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	175V
Max Collector Current	1A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA 10V
Current - Collector Cutoff (Max)	10μA
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)	175V
Turn Off Time-Max (toff)	650ns
Turn On Time-Max (ton)	200ns
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant