PBSS5220V,115 Overview

DC current gain in this device equals 155 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 455mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.185MHz is present in the transition frequency.This device can take an input voltage of 20V volts before it breaks down.Collector current can be as low as 2A volts at its maximum.

PBSS5220V,115 Features

the DC current gain for this device is 155 @ 1A 2V
a collector emitter saturation voltage of 455mV
the vce saturation(Max) is 390mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 185MHz

PBSS5220V,115 Applications

There are a lot of Nexperia USA Inc. PBSS5220V,115 applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface