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KSE13003H2ASTU

KSE13003H2ASTU

KSE13003H2ASTU

ON Semiconductor

KSE13003H2ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSE13003H2ASTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation20W
Current Rating1.5A
Frequency 4MHz
Base Part Number KSE13003
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Transistor Application SWITCHING
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 11mm
Length 8mm
Width 3.25mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9755 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.240271$0.240271
10$0.226670$2.2667
100$0.213840$21.384
500$0.201736$100.868
1000$0.190317$190.317

KSE13003H2ASTU Product Details

KSE13003H2ASTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 500mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.4MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 1.5A volts.

KSE13003H2ASTU Features


the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz

KSE13003H2ASTU Applications


There are a lot of ON Semiconductor KSE13003H2ASTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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