KSE13003H2ASTU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 500mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.An emitter's base voltage can be kept at 9V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.4MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 1.5A volts.

KSE13003H2ASTU Features

the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz

KSE13003H2ASTU Applications

There are a lot of ON Semiconductor KSE13003H2ASTU applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting