SST2222AT116 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).The part has a transition frequency of 300MHz.A breakdown input voltage of 40V volts can be used.The maximum collector current is 600mA volts.
SST2222AT116 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
SST2222AT116 Applications
There are a lot of ROHM Semiconductor SST2222AT116 applications of single BJT transistors.
- Interface
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- Inverter
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- Muting
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- Driver
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