BC856B-13-F Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of -100mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC856B-13-F Features

the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC856B-13-F Applications

There are a lot of Diodes Incorporated BC856B-13-F applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting