BCP56TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCP56TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCP56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
1.65mm
Length
6.55mm
Width
3.55mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.208560
$0.20856
10
$0.196755
$1.96755
100
$0.185618
$18.5618
500
$0.175111
$87.5555
1000
$0.165199
$165.199
BCP56TA Product Details
BCP56TA Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 150MHz is present in the part.This device can take an input voltage of 80V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP56TA Features
the DC current gain for this device is 40 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
BCP56TA Applications
There are a lot of Diodes Incorporated BCP56TA applications of single BJT transistors.