DN350T05-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DN350T05-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DN350T05
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
5V
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037862
$0.037862
500
$0.027840
$13.92
1000
$0.023200
$23.2
2000
$0.021284
$42.568
5000
$0.019892
$99.46
10000
$0.018504
$185.04
15000
$0.017896
$268.44
50000
$0.017597
$879.85
DN350T05-7 Product Details
DN350T05-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.50MHz is present in the transition frequency.An input voltage of 350V volts is the breakdown voltage.The maximum collector current is 500mA volts.
DN350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 50MHz
DN350T05-7 Applications
There are a lot of Diodes Incorporated DN350T05-7 applications of single BJT transistors.