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DN350T05-7

DN350T05-7

DN350T05-7

Diodes Incorporated

DN350T05-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DN350T05-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DN350T05
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage350V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21252 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.037862$0.037862
500$0.027840$13.92
1000$0.023200$23.2
2000$0.021284$42.568
5000$0.019892$99.46
10000$0.018504$185.04
15000$0.017896$268.44
50000$0.017597$879.85

DN350T05-7 Product Details

DN350T05-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.50MHz is present in the transition frequency.An input voltage of 350V volts is the breakdown voltage.The maximum collector current is 500mA volts.

DN350T05-7 Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz

DN350T05-7 Applications


There are a lot of Diodes Incorporated DN350T05-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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