TTA1943(Q) Overview

This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -3V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 800mA, 8A.With the emitter base voltage set at -5V, an efficient operation can be achieved.Collector current can be as low as 15A volts at its maximum.

TTA1943(Q) Features

the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V

TTA1943(Q) Applications

There are a lot of Toshiba Semiconductor and Storage TTA1943(Q) applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver