KSC815YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC815YBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSC815
Power - Max
400mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
200MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.05000
$0.05
500
$0.0495
$24.75
1000
$0.049
$49
1500
$0.0485
$72.75
2000
$0.048
$96
2500
$0.0475
$118.75
KSC815YBU Product Details
KSC815YBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 1V.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).TO-92-3 is the supplier device package for this product.The device has a 45V maximal voltage - Collector Emitter Breakdown.
KSC815YBU Features
the DC current gain for this device is 120 @ 50mA 1V the vce saturation(Max) is 400mV @ 15mA, 150mA the supplier device package of TO-92-3
KSC815YBU Applications
There are a lot of ON Semiconductor KSC815YBU applications of single BJT transistors.