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KSC815YBU

KSC815YBU

KSC815YBU

ON Semiconductor

KSC815YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC815YBU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC815
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 200MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.05000 $0.05
500 $0.0495 $24.75
1000 $0.049 $49
1500 $0.0485 $72.75
2000 $0.048 $96
2500 $0.0475 $118.75
KSC815YBU Product Details

KSC815YBU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 1V.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).TO-92-3 is the supplier device package for this product.The device has a 45V maximal voltage - Collector Emitter Breakdown.

KSC815YBU Features


the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-92-3

KSC815YBU Applications


There are a lot of ON Semiconductor KSC815YBU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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