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KSC815YBU

KSC815YBU

KSC815YBU

ON Semiconductor

KSC815YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC815YBU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC815
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 200MHz
In-Stock:164149 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.05000$0.05
500$0.0495$24.75
1000$0.049$49
1500$0.0485$72.75
2000$0.048$96
2500$0.0475$118.75

KSC815YBU Product Details

KSC815YBU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 1V.A VCE saturation (Max) of 400mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).TO-92-3 is the supplier device package for this product.The device has a 45V maximal voltage - Collector Emitter Breakdown.

KSC815YBU Features


the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-92-3

KSC815YBU Applications


There are a lot of ON Semiconductor KSC815YBU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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