BC850BLT1G Overview

This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.A transition frequency of 100MHz is present in the part.Breakdown input voltage is 45V volts.The maximum collector current is 100mA volts.

BC850BLT1G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC850BLT1G Applications

There are a lot of ON Semiconductor BC850BLT1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter